• DocumentCode
    376016
  • Title

    1.5 μm wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH4/H2 dry etching and regrowth

  • Author

    Midorikawa, Hideki ; Muranushi, Kengo ; Nunoya, Nobuhiro ; Sano, Takuya ; Tamura, Shigeo ; Arai, Shigehisa

  • Author_Institution
    Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
  • Volume
    2
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    407
  • Abstract
    We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces
  • Keywords
    III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor quantum wires; spontaneous emission; sputter etching; vapour phase epitaxial growth; 1.5 micron; 85 C; CH4/H2 dry etching; GaInAsP-InP; GaInAsP/InP 5-layered quantum-wire lasers; H2; etched/regrown interfaces; lasing properties; low-damage property; quantum-wire laser fabrication; spontaneous emission efficiency; threshold; wire width; Ambient intelligence; Controllability; Dry etching; Electron beams; Indium phosphide; Optical device fabrication; Scanning electron microscopy; Spontaneous emission; Threshold current; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
  • Conference_Location
    San Diego, CA
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-7105-4
  • Type

    conf

  • DOI
    10.1109/LEOS.2001.968845
  • Filename
    968845
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=376016