Title :
1.5 μm wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH4/H2 dry etching and regrowth
Author :
Midorikawa, Hideki ; Muranushi, Kengo ; Nunoya, Nobuhiro ; Sano, Takuya ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces
Keywords :
III-V semiconductors; MOCVD; electron beam lithography; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fabrication; quantum well lasers; semiconductor quantum wires; spontaneous emission; sputter etching; vapour phase epitaxial growth; 1.5 micron; 85 C; CH4/H2 dry etching; GaInAsP-InP; GaInAsP/InP 5-layered quantum-wire lasers; H2; etched/regrown interfaces; lasing properties; low-damage property; quantum-wire laser fabrication; spontaneous emission efficiency; threshold; wire width; Ambient intelligence; Controllability; Dry etching; Electron beams; Indium phosphide; Optical device fabrication; Scanning electron microscopy; Spontaneous emission; Threshold current; Wire;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.968845
