Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)

Author

Kondow, M. ; Kitatani, T. ; Aoki, M. ; Nakatsuka, S. ; Kudo, M.

Author_Institution

RWCP Optoelectronics Hitachi Lab., Hitachi Ltd., Tokyo, Japan

Volume

2

fYear

2001

fDate

2001

Firstpage

622

Abstract

We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al_0.3Ga_0.7As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical materials; photoluminescence; rapid thermal annealing; semiconductor lasers; stimulated emission; 10 Gbit/s; 600 C; 70 C; 750 C; Al_0.3Ga_0.7As; GaInNAs; PL intensity; RTA; cladding layer; crystallinity; edge-emitting laser; growth temperature; low in-situ annealing temperature; photoluminescence intensity; solid-source MBE; Crystallization; Electronic mail; Laboratories; Lasers and Electro-Optics Society; Next generation networking; Rapid thermal annealing; Surface emitting lasers; Surface waves; Temperature dependence; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.968969

Filename

968969