Effective alpha factor in bulk semiconductor optical amplifiers of different lengths

Author

Occhi, L. ; Scollo, R. ; Schares, L. ; Guekos, G.

Author_Institution

Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Switzerland

Volume

1

fYear

2001

fDate

2001

Firstpage

105

Abstract

We presented and discussed experimental and numerical results on the effective alpha factor in bulk SOAs. We showed that the magnitude of alpha factor increases by increasing the dc bias current. Moreover we demonstrated that the effective alpha factor significantly increases with the length of the active region, because of the nonlinear gain compression. This characteristic can be very important for applications based on cross phase modulation in SOAs

Keywords

carrier density; electro-optical modulation; nonlinear optics; optical communication equipment; semiconductor optical amplifiers; XPM; active region; bulk SOAs; bulk semiconductor optical amplifiers; cross phase modulation; dc bias current; effective alpha factor; nonlinear gain compression; numerical results; Charge carrier density; Current measurement; Nonlinear optics; Optical beams; Optical modulation; Optical signal processing; Optical wavelength conversion; Phase modulation; Semiconductor optical amplifiers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969195

Filename

969195