Quantum dot lasers for high power and telecommunication applications

Author

Reithmaier, J.P. ; Klopf, F. ; Krebs, R.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

Volume

1

fYear

2001

fDate

2001

Firstpage

269

Abstract

An overview is given about the recent development of high performance quantum dot lasers for 980 nm high power and 1.3 μm telecommunication applications. New type of devices are also very suitable for ultra stable single mode emitting distributed feedback (DFB) lasers. We have used the DWELL-concept to implement stacked InAs/GaInAs quantum dot layers in the active region of lasers

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; laser transitions; optical transmitters; quantum well lasers; semiconductor quantum dots; 1.3 micron; 980 nm; DFB lasers; DWELL-concept; InAs-GaInAs; InAs/GaInAs quantum dot lasers; active region; high performance quantum dot lasers; high power; overview; quantum dot lasers; telecommunication applications; ultra stable single mode emitting distributed feedback lasers; Distributed feedback devices; Laser modes; Laser stability; Power generation; Power lasers; Quantum dot lasers; Quantum well lasers; Temperature; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969278

Filename

969278