Investigation of 2D-lattice distributed reflector lasers

Author

Sargent, Laurence J. ; Massara, Aeneas B. ; Gioannini, Mariangela ; Yong, Jennifer ; Heard, Peter J. ; Penty, Richard V. ; White, Ian H.

Author_Institution

Centre for Commun. Res., Bristol Univ., UK

Volume

1

fYear

2001

fDate

2001

Firstpage

275

Abstract

A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K_g >250cm ^-1. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s

Keywords

diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; photonic band gap; quantum well lasers; semiconductor device models; waveguide lasers; 10 Gbit/s; 2D photonic crystal; 2D-lattice distributed reflector lasers; InGaAsP-InP; InGaAsP-InP 2D-lattice MQW laser; coupling coefficient; device cavity; etched device; grating design; large-signal modulation; mode-hop free single-mode emission; optical field intensity; optical properties; Distributed feedback devices; Etching; Gratings; Laser modes; Optical devices; Optical polarization; Optical waveguides; Quantum well lasers; Semiconductor laser arrays; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969281

Filename

969281