DocumentCode
376178
Title
High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source
Author
Wei, Jian ; Xia, Fengnian ; Li, Chunqiang ; Forrest, Stephen R.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
1
fYear
2001
fDate
2001
Firstpage
334
Abstract
Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 μm thick GaAs separate confinement layer
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; 0.18 micron; 9 nm; GaAs separate confinement layer; InGaAsN; InGaAsN based quantum well lasers; InGaAsN-GaAs; RF plasma source; active N species; gas source molecular beam epitaxy; solid As source; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Nitrogen; Optical materials; Plasma confinement; Plasma sources; Quantum well lasers; Radio frequency; Solids;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location
San Diego, CA
ISSN
1092-8081
Print_ISBN
0-7803-7105-4
Type
conf
DOI
10.1109/LEOS.2001.969311
Filename
969311
Link To Document