Title :
Polysilicon resistor degradation - modeling and mechanism
Author :
Sankaran Jayanarayanan
Author_Institution :
Maxim Integrated, San Jose CA 95134, USA
Abstract :
The resistance degradation of lightly doped Polysilicon Resistors (PR´s) has been studied in detail, and the degradation rate statistically modelled. After accounting for Joule Heating [1], the resistance degradation is still observed to depend on current, indicating that current affects the degradation independent of Joule Heating.
Keywords :
"Mathematical model","Degradation","Resistance","Resistors","Stress","Data models","Current density"
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
DOI :
10.1109/IIRW.2015.7437080
