• DocumentCode
    3763265
  • Title

    Hydrogen sensing performance of an electrophoretic deposition (EPD) based Pd/GaN Schottky diode

  • Author

    Wei-Cheng Chen;Huey-Ing Chen;Po-Cheng Chou;Ching-Hong Chang;Yung-Jen Chiou;Wen-Chau Liu

  • Author_Institution
    Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan, ROC
  • fYear
    2015
  • Firstpage
    355
  • Lastpage
    358
  • Abstract
    In this work, an interesting Pd/GaN Schottky diode-type hydrogen sensor, prepared by electrophoretic deposition (EPD) method, is fabricated and investigated. The studied device shows a high sensing response of 6.67×104 when exposing to a 1% H2/air gas at 100°C, and also detect even as low as 50 ppm H2/air gas. Moreover the studied device shows short response time and recovery time as 10 and 82 s, respectively, when exposing to a 1% H2/air gas at 150°C. Based on these excellent properties, the studied device gives a promise for high-performance hydrogen sensing applications.
  • Keywords
    "Hydrogen","Temperature sensors","Time factors","Schottky diodes","Metals","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Sensing Technology (ICST), 2015 9th International Conference on
  • Electronic_ISBN
    2156-8073
  • Type

    conf

  • DOI
    10.1109/ICSensT.2015.7438422
  • Filename
    7438422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3763265