DocumentCode :
3763686
Title :
Performance and reliability of high power, high brightness 8xx-9xx nm semiconductor laser diodes
Author :
Y. Yamagata;Y. Yamada;Y. Kaifuchi;R. Nogawa;R. Morohashi;M. Yamaguchi
Author_Institution :
Optoenergy Inc., Chiba, Japan
fYear :
2015
Firstpage :
7
Lastpage :
8
Abstract :
High-power and high-reliability single emitter laser diodes with 8xx-9xx nm lasing wavelength based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Laser structure optimization in vertical layer design and stripe width enabled high power operation of 9xx nm LDs up to 15-17 W range with high reliability. Possibility of further improvement in high power operation is also discussed.
Keywords :
"Reliability","Diode lasers","Optical device fabrication","Optical refraction","Optical variables control","Power generation","Resistance"
Publisher :
ieee
Conference_Titel :
High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE
ISSN :
2379-0385
Print_ISBN :
978-1-4673-9177-1
Electronic_ISBN :
2379-0393
Type :
conf
DOI :
10.1109/HPD.2015.7439668
Filename :
7439668
Link To Document :
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