• DocumentCode
    3764543
  • Title

    Circuit perspective of Terahertz Double-Gate MOSFET for switch

  • Author

    Viranjay M. Srivastava

  • Author_Institution
    Department of Electronics Engineering, Howard College, University of KwaZulu-Natal, Durban - 4041, South Africa
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The Double-Gate MOSFET can be used to design the nanotechnology based switches at the range of Terahertz for transceiver processes. In this research, the switching frequency with the help of transconductance for Terahertz Double-Gate MOSFET has been analyzed. The switching transient has been observed with inclusion of currents. It will be suitable for the application of nanotechnology regime.
  • Keywords
    "MOSFET","Logic gates","Capacitance","CMOS integrated circuits","Switches","Transconductance","Schottky diodes"
  • Publisher
    ieee
  • Conference_Titel
    India Conference (INDICON), 2015 Annual IEEE
  • Electronic_ISBN
    2325-9418
  • Type

    conf

  • DOI
    10.1109/INDICON.2015.7443241
  • Filename
    7443241
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3764543