• DocumentCode
    3764751
  • Title

    Analysis of GaSb/InAs heterojunction Gate All Around Tunnel FET (HGAATFET)

  • Author

    Ajay;Mridula Gupta;Shashwat Bhattacharya;Sujata Pandey

  • Author_Institution
    Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi-110021, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this paper, a GaSb/InAs heterojunction Gate All Around Tunnel FET has been investigated. Broken gap alignment has been used in order to achieve more band-to-band tunneling and hence the ION of the device is increased. The electrical characteristics of the device such as surface potential, electric filed, energy band and drain current have been studied by using the device simulator. The characteristics of the device are simulated using Silvaco.
  • Keywords
    "Logic gates","MOSFET","Tunneling","Spontaneous emission"
  • Publisher
    ieee
  • Conference_Titel
    India Conference (INDICON), 2015 Annual IEEE
  • Electronic_ISBN
    2325-9418
  • Type

    conf

  • DOI
    10.1109/INDICON.2015.7443451
  • Filename
    7443451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3764751