DocumentCode
376499
Title
One-step rapid thermal process for bandgap tuned lasers in GaAs/AlGaAs structure
Author
Ng, S.L. ; Ooi, B.S. ; Lam, Y.L. ; Chan, Y.C.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
A quantum well intermixing technique in GaAs/AlGaAs structure is developed for band-gap tuned lasers. This technique employs a grown-in AlAs as intermixing source and an oxidized AlAs as intermixing mask by one-step rapid thermal process.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser tuning; optical fabrication; quantum well lasers; rapid thermal processing; AlAs; GaAs-AlGaAs; GaAs/AlGaAs structure; bandgap tuned lasers; grown-in AlAs; intermixing mask; intermixing source; one-step rapid thermal process; oxidized AlAs; quantum well intermixing technique; Aluminum; Gallium arsenide; Laser tuning; Optical control; Oxidation; Photonic band gap; Quantum well lasers; Rapid thermal annealing; Rapid thermal processing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970806
Filename
970806
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