DocumentCode
376512
Title
High power 1.55 /spl mu/m integrated superluminescent light source
Author
Guotong Du ; Yang Liu ; Yuping Zeng ; Junfeng Song ; Yinjing Zhi
Author_Institution
Dept. of Electron. Eng., Jilin Univ., Changchun, China
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
In order to suppress lasing and obtain high superluminescent power, we analyzed the lasing mechanism of integrated devices and three new schemes had been proposed in this paper. More than 300 mW pulsed power was obtained.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; light sources; optical communication equipment; semiconductor quantum wells; superluminescent diodes; wavelength division multiplexing; 1.55 micron; 300 mW; InGaAsP-InP; InGaAsP/InP SCH-MQWs; WDM; high power 1.55 /spl mu/m integrated superluminescent light source; high superluminescent power; integrated devices; lasing mechanism; lasing suppression; pulsed power; Etching; Light emitting diodes; Light sources; Optical reflection; Optical scattering; Optical waveguides; Semiconductor optical amplifiers; Space vector pulse width modulation; Superluminescent diodes; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970821
Filename
970821
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