Statistical analysis of leakage current of trapezoidal FinFETs

A framework for statistical analysis of leakage current in tri-gate trapezoidal FinFETs is presented. Using Monte Carlo simulation, effect of random dopant fluctuation has been incorporated. A distribution of leakage current, associated with physical or process parameter variation, has been observed that is attributed to the random dopant fluctuation. It is found that the increase or decrease in leakage current due to different parameters variation is mainly due to the threshold voltage variation of the device. A comparative study of leakage current distribution of trapezoidal and rectangular FinFETs reveals the advantages of using trapezoidal fins over rectangular fins for FinFET technology.