SIMS analysis of CH/sub 4/-ECR-plasma-irradiated GaInAsP/InP for low surface recombination in micro light emitters

Author

Ichikawa, H. ; Inoshita, K. ; Baba, T. ; Aizawa, K.

Author_Institution

Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

We confirmed the reduction in surface recombination of 1.55-/spl mu/m-GaInAsP/InP micro light emitters by the CH/sub 4/-ECR-plasma irradiation. The SIMS analysis suggested that this effect was provided by shallowly implanted C, which possibly formed a deep level that electrically insulates near the surface.

Keywords

III-V semiconductors; carrier lifetime; deep levels; gallium arsenide; indium compounds; micro-optics; optical fabrication; photoluminescence; photonic band gap; quantum well lasers; sputter etching; surface recombination; 1.5 micron; GaInAsP-InP; ICP etching; PL intensity; SIMS analysis; carrier lifetime; compressively-strained QW; deep level; low surface recombination; methane ECR plasma irradiation; micro light emitters; micro-columns; microlasers; photonic crystals; shallowly implanted C; strain-compensated barrier; Annealing; Charge carrier lifetime; Indium phosphide; Passivation; Plasma applications; Plasma measurements; Plasma properties; Polymer films; Reproducibility of results; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970978

Filename

970978