Title :
Electrical properties of Aluminium doped Zinc Oxide nanorods with different dopant percentage
Author :
R. Mohamed;M. Z. Ibrahim;N. A. M. Asib;M. Hafiz Mamat;M. Rusop;Salman A.H Alrokayan;Haseeb A. Khan
Author_Institution :
NANO-ElecTronic Centre, Fac. of Electrical Engineering, NANO-SciTech Centre, Ins. of Science, Universiti Teknologi MARA, Shah Alam, Malaysia
Abstract :
This Zinc Oxide (ZnO) nanorods films was synthesized with various Aluminum (Al) doping percentage deposited on ZnO seed layer using two step process sol-gel spin coating and immersion method. The Al doping was varied at different percentage from 0.6 at.% Al to 1.2 at.% Al. The morphology and electrical properties of ZnO nanorods were characterized using Field Emission Scanning Electron Microscopy (FESEM) and current voltage (I-V) measurement system respectively. Based on FESEM images, it showed that the ZnO nanorods are in hexagonal-shaped with the increasing of diameter size ZnO nanorods as the increasing percentage of Al doped. The current voltage measurement showed the highest current voltage and lowest resistivity at 0.8 at.% of Al doping.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Doping","Conductivity","Voltage measurement","Films","Substrates"
Conference_Titel :
Research and Development (SCOReD), 2015 IEEE Student Conference on
DOI :
10.1109/SCORED.2015.7449377
