Title :
Polysilicon diodes as temperature sensors for chemical microreaction systems
Author :
Karnik, Sooraj V. ; Vo, Huyen X. ; Hatalis, Miltiadis K. ; Kothare, Mayuresh V.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Lateral polysilicon P+-N-N+ and P+-P-N+ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems
Keywords :
chemical sensors; elemental semiconductors; micromechanical devices; microsensors; semiconductor diodes; silicon; temperature sensors; thermochemistry; 50 to 150 C; MEMS; Si; chemical microreaction systems; electrical properties; lateral polysilicon P+-N-N+ diode; lateral polysilicon P+-P-N+ diode; polysilicon diodes; reverse current; series resistance; temperature sensors; Active matrix organic light emitting diodes; Chemical sensors; Conducting materials; Infrared image sensors; Micromechanical devices; Semiconductor diodes; Silicon; Substrates; Temperature sensors; Thermal conductivity;
Conference_Titel :
Semiconductor Device Research Symposium, 2001 International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-7432-0
DOI :
10.1109/ISDRS.2001.984468
