Title :
An InP DHBT 140 GHz-165 GHz amplifier
Author :
Sun Yan; Cheng Wei; Li Ou Peng; Lu Hai Yan; Li Xiao; Wang Yuan; Niu Bin
Author_Institution :
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, 210016, China
Abstract :
We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140-165 GHz, formed by common-emitter configured 0.5 um InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >5 dB from 140 GHz-165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT MMIC amplifier operating in D-band employing TFM in china. The total size of this 3-stage amplifier is only 1.04 mm×0.88 mm.
Keywords :
"DH-HEMTs","MMICs","Radio frequency","Sun","Dielectrics","Heterojunction bipolar transistors"
Conference_Titel :
Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
Print_ISBN :
978-1-4673-6543-7
DOI :
10.1109/ICCPS.2015.7454166
