DC characteristic analysis using physical model and the FDTD method for the illuminated MESFET

Author

Kuwayama, T. ; Kawasaki, S.

Author_Institution

Dept. of Electr. & Electron. Eng., Tokai Univ., Kanagawa, Japan

Volume

2

fYear

2001

fDate

3-6 Dec. 2001

Firstpage

726

Abstract

In this paper, theoretical data from the drift-diffusion model with the FDTD method were compared with measurement data and the equivalent circuit model of non-illuminated and illuminated MESFETs. Comparison between the drift-diffusion model, the equivalent circuit model and measurement data was carried out. Furthermore, the electric fields of the MESFET, including an air region above FET electrodes, were analysed by the FDTD method. The simulation method proposed here can be extended to realize a global simulation to analyze a device, a circuit, an antenna, and a package with the same method.

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; finite difference time-domain analysis; gallium arsenide; microwave field effect transistors; phototransistors; semiconductor device models; DC characteristic analysis; FDTD method; FET electrodes; GaAs; GaAs MESFET; MESFET electric fields; active integrated antenna; air region; direct optical illumination; drift-diffusion model; equivalent circuit model; global simulation; illuminated MESFETs; simulation method; Analytical models; Charge carrier processes; Circuit simulation; Equations; Equivalent circuits; Field effect MMICs; Finite difference methods; Lighting; MESFETs; Magnetic field measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei, Taiwan

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985474

Filename

985474