Title :
DC characteristic analysis using physical model and the FDTD method for the illuminated MESFET
Author :
Kuwayama, T. ; Kawasaki, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokai Univ., Kanagawa, Japan
Abstract :
In this paper, theoretical data from the drift-diffusion model with the FDTD method were compared with measurement data and the equivalent circuit model of non-illuminated and illuminated MESFETs. Comparison between the drift-diffusion model, the equivalent circuit model and measurement data was carried out. Furthermore, the electric fields of the MESFET, including an air region above FET electrodes, were analysed by the FDTD method. The simulation method proposed here can be extended to realize a global simulation to analyze a device, a circuit, an antenna, and a package with the same method.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; finite difference time-domain analysis; gallium arsenide; microwave field effect transistors; phototransistors; semiconductor device models; DC characteristic analysis; FDTD method; FET electrodes; GaAs; GaAs MESFET; MESFET electric fields; active integrated antenna; air region; direct optical illumination; drift-diffusion model; equivalent circuit model; global simulation; illuminated MESFETs; simulation method; Analytical models; Charge carrier processes; Circuit simulation; Equations; Equivalent circuits; Field effect MMICs; Finite difference methods; Lighting; MESFETs; Magnetic field measurement;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985474
