A low-noise distributed amplifier using cascode-connected BJT terminal circuit

Author

Kawashima, Munenari ; Hayashi, Hitoshi ; Nakagawa, Tadao ; Araki, Katsuhiko

Author_Institution

Network Innovation Labs., NTT, Kanagawa, Japan

Volume

1

fYear

2001

fDate

2001

Firstpage

21

Abstract

This paper describes a low-noise distributed amplifier that uses cascode-connected bipolar junction transistor (BJT) terminal circuit. This amplifier has a lower NF compared with a resistance-terminated distributed amplifier, yet has an equivalent frequency characteristic, because the cascode-connected BJT terminal circuit improves noise performance at low frequencies and keeps the matching condition up to high frequency. The noise figure of the fabricated amplifier was less than 8.3 dB over a range of 0.1-8 GHz, which was about 1 dB better than that of a conventional distributed amplifier, without deterioration in gain and bandwidth. We obtained a flat gain characteristic of 9.7±1.0 dB over a range of 3-15 GHz

Keywords

MMIC amplifiers; UHF amplifiers; bipolar MMIC; distributed amplifiers; integrated circuit noise; 0.1 to 8 GHz; 3 to 15 GHz; 8.3 dB; 8.7 to 10.7 dB; cascode-connected BJT terminal circuit; flat gain characteristic; frequency characteristic; low-noise distributed amplifier; matching condition; noise performance; Bipolar transistor circuits; Broadband amplifiers; Circuit noise; Distributed amplifiers; Distributed parameter circuits; Frequency; Impedance; Low-frequency noise; Noise figure; Noise measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985578

Filename

985578