Piezoelectric polarization dependent model of AlGaN/GaN high electron mobility transistors for improved microwave performance

Author

Rashmi ; Kranti, Abhinav ; Gupta, R.S. ; Haldar, S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India

Volume

1

fYear

2001

fDate

2001

Firstpage

256

Abstract

In the present paper an analytical model has been developed for threshold voltage, I_ds-V_ds characteristics, transconductance and cut-off frequency of AlGaN/GaN HEMTs incorporating the effects of strongly dominant piezoelectric induced polarization. The effect of source/drain resistances and velocity saturation has also been considered and the results so obtained are in close proximity with experimental data

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; I_ds-V_ds characteristics; cut-off frequency; high electron mobility transistors; microwave performance; piezoelectric polarization dependent model; source/drain resistances; threshold voltage; transconductance; velocity saturation; Aluminum gallium nitride; Doping; Electrons; Equations; Gallium nitride; HEMTs; MODFETs; Microwave devices; Piezoelectric polarization; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985635

Filename

985635