A fully integrated broadband amplifier with 161% 3-dB bandwidth

Author

Wu, Wen-Chieh ; Wang, Huei ; Lin, Hao-Hsiung

Author_Institution

Graduate Inst. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

2001

fDate

2001

Firstpage

291

Abstract

A broadband, low voltage supply, fully,integrated monolithic amplifier using GaAs high electron mobility transistors is described. At 2 V power supply, it has 14.5 ± 0.4 dB of gain from 1 through 6 GHz. The 3-dB bandwidth is from 800 MHz to 7.4 GHz. The bandwidth is 161%. More than 15 dB gain is attainable if the supply voltage is increased to 3 V

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; S-parameters; UHF amplifiers; field effect MMIC; field effect analogue integrated circuits; gallium arsenide; impedance matching; integrated circuit design; integrated circuit noise; intermodulation distortion; low-power electronics; wideband amplifiers; 1 to 6 GHz; 14.5 dB; 15 dB; 2 V; 3 V; 3-dB bandwidth; 800 MHz to 7.4 GHz; GaAs; GaAs HEMT broadband low voltage fully integrated amplifier; GaAs high electron mobility transistor; S-parameters; circuit design; fully integrated lossy matched broadband amplifier; intermodulation characteristics; noise figure; supply voltage; Bandwidth; Broadband amplifiers; Circuits; Gallium arsenide; HEMTs; Inductors; Power supplies; Radio frequency; Resistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985644

Filename

985644