Title :
A low noise and low power dissipation downconverter MMIC for DBS applications
Author :
Yun, Young ; Fukuda, Takeshi ; Kunihisa, Taketo ; Tanaka, Tsuyoshi ; Ishikawa, Osamu
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
In this work, using 0.2 μm GaAs modulation doped FET (MODFET) technology, a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) applications. Without an LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is 5 dB lower than conventional circuits. A low LO power of -10 dBm was required for normal DBS operation of the downconverter MMIC, which reduced the power consumption to 175 mW via removal of the LO amplifier on the MMIC. The LO leakage power at IF output was suppressed to a level lower than -30 dBm, which removes a bulky LO rejection filter from the board. The fabricated chip, which includes a mixer, IF amplifiers, and LO rejection filter, exhibits a small size of 0.84×0.9 mm2
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; integrated circuit layout; integrated circuit noise; low-power electronics; 0.2 micron; 175 mW; 4.8 dB; DBS applications; GaAs; GaAs MODFET downconverter MMIC; IF output; LO amplifier removal; LO leakage power; LO power; direct broadcasting satellite; low LO driving power; low noise; low power consumption; optimal bias voltage; small chip size; Broadcast technology; Epitaxial layers; FETs; Filters; Gallium arsenide; HEMTs; MMICs; MODFET circuits; Power dissipation; Satellite broadcasting;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985645
