A novel window function approach for voltage controlled memristor

Memristor being a fourth fundamental passive electrical circuit element in nanoscale technology has gained a great interest in the new era of semiconductor technology. The memristor with its special property of nonvolatility, low power consumption, small size and improved scalability has captured interest in many applications from digital logic circuits to neuromorphic computing. This paper will discuss and compare the most noteworthy models of voltage controlled memristor. We propose implementation of different window functions which can be implemented in the future voltage controlled memristor models to observe nonlinear hysteresis behaviour of memristor.