• DocumentCode
    3770486
  • Title

    High power density thin film resistors

  • Author

    T. J. Faith

  • Author_Institution
    RCA Astro-Electronics Division, Princeton, N. J. 08540, USA
  • fYear
    1975
  • Firstpage
    75
  • Lastpage
    79
  • Abstract
    Untrimmed Ni-Cr resistors on glazed alumina substrates, hermetically sealed in a dry nitrogen atmosphere, survive and remain stable when subjected to power densities greater 2000 W/in2. Large (>7 × 10−4in2) resistors with standard top-hat trimming fail at less than 1000 W/in2 due to hot spots, however, a change in trim line configuration results in stable resistors at greater than 1200 W/in2. Resistance-time characteristics depend on mean resistor temperature, which increases (at a given power density) as the square root of resistor area. Results predict, e.g., that all resistors in a 3/8 × 3/8 × 0.080 inch (0.5W) package can be powered at 2000 W/in2 for several years before a 1 percent resistance change is experienced. The resistor area for such a configuration, 2.5 × 10−4in2, is 50 times less than that required with the present power density design value of 40 W/in2. Resistors deposited on unglazed alumina are even more stable than those deposited on glazed alumina because of their lower operating temperature.
  • Keywords
    "Resistors","Resistance","Substrates","Density measurement","Power system measurements","Temperature measurement","Dielectrics"
  • Publisher
    ieee
  • Conference_Titel
    Electrical/Electronics Insulation Conference, 1975 EIC 12th
  • Print_ISBN
    978-1-5090-3111-5
  • Type

    conf

  • DOI
    10.1109/EIC.1975.7458496
  • Filename
    7458496