• DocumentCode
    3770911
  • Title

    Theoretical studies of graphene on SiC

  • Author

    Hiroyuki Kageshima;Hiroki Hibino;Hiroshi Yamaguchi;Masao Nagase

  • Author_Institution
    Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu-cho, Matsue 690-8504, Japan
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1-100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11-20] step. It has been found that the surface steps play important roles for the graphene growth. These studies provide us fundamental knowledge about the application of graphene on SiC.
  • Keywords
    "Graphene","Silicon","Adsorption","Rough surfaces","Surface roughness","Face","Silicon carbide"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460437
  • Filename
    7460437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770911