Analysis of Single Event Effect on SRAM Based on TCAD Simulation

Based on TCAD (Technology Computer Aided Design), single event effect of SRAM is simulated by using mixed-mode simulation module of heavy ion, in which the key NMOS is modeled in 3D for commercial 40 nm technology. Analyzing of the influence of several important heavy ion incidence factors, the linear energy transfer (LET), the incidence location and the incidence angle are executed. The results indicate that the variation of key parameters in 40 nm technology matches well with that in traditional technology. Moreover, the simplified R-C mixed-mode simulation module is proposed. Two modules are compared and showed good matching in each node of the voltage and current. So it is valid to use this module to analysis the single event effect of SRAM.