Tunable bandgap and wavelength range of zinc blende indium gallium nitride quantum dots

Indium Gallium Nitride is a material much known for its wide range of tunable bandgap. This feature makes it a viable candidate for optoelectronics and photovoltaic devices. Quantum dots made out of Indium Gallium Nitride have found numerous applications. However, it is the wurtzite Indium Gallium Nitride quantum dots which have been much studied. But recent advancements show that zinc blende Indium Gallium Nitride structure can also be utilized for multipurpose devices. This work has focused on finding the tunable bandgap and wavelength of zinc blende Indium Gallium Nitride quantum dots to evaluate its possibility of being used in optoelectronics and photovoltaics.