Title :
Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters
Author :
Viranjay M. Srivastava
Author_Institution :
Department of Electronic Engineering, Howard Collage, University of KwaZulu-Natal, Durban - 4041, South Africa
Abstract :
The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.
Keywords :
"MOSFET","Semiconductor device modeling","Capacitance","Logic gates","Integrated circuit modeling","Analytical models","Resistance"
Conference_Titel :
Trends in Automation, Communications and Computing Technology (I-TACT-15), 2015 International Conference on
DOI :
10.1109/ITACT.2015.7492672
