Title :
High-density reRAM for storage class memory
Author :
Scott Sills;Alessandro Calderoni;Nirmal Ramaswamy;Shuichiro Yasuda;Katsuhisa Aratani
Author_Institution :
Micron Technology, Inc, Boise, Idaho, USA
Abstract :
This paper highlights selection process for ReRAM development, key challenges faced when implementing high-density ReRAM, and reports on 16Gb Cu-ReRAM designed at the 27nm node, with 200MB/s write and 1GB/s read throughputs.
Keywords :
"Switches","Resistance","Transistors","Metals","Ions","Bit error rate","Random access memory"
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
DOI :
10.1109/NVMTS.2015.7499973
