Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs

The study of the behavior of a power device operating in a power circuit while considering its interactions with the studied circuit remains a very important step in the power circuit design. The base drive has a primary order effect on the switching speed during the turn-off phase of power bipolar junction transistors. Hence, we will focus in this paper, through numerical simulation using the finite element method, on the influence of the base negative drive, on the turn-off transient behavior of Silicon and Silicon Carbide power bipolar junction transistors. Consequently, one of benefits of using Silicon Carbide material instead of Silicon in designing of power bipolar junction transistors has been highlighted.