• DocumentCode
    3779748
  • Title

    A new CMOS SRAM cell with fully planarizing technology

  • Author

    Yoshitaka Narita;Shuichi Ohya;Masanori Kikuohi

  • Author_Institution
    1st LSI Division, NEC Corporation, 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    103
  • Lastpage
    104
  • Abstract
    In this paper, we describe the fully planarizing process technology, the basic characteristics of the two kinds of contact structure and a 256K SRAM fabricated with this technology.
  • Keywords
    "CMOS integrated circuits","CMOS technology","SRAM cells","Films","Filling","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1987. SymVLSITech 1987. Symposium on
  • Print_ISBN
    978-1-5090-3151-1
  • Type

    conf

  • Filename
    7508773
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3779748