Class-F GaN power amplifier design using model-based nonlinear embedding

This paper presents the design of a GaN-based class-F power amplifier using nonlinear embedded model of GaN HEMT transistor. The non-linear device embedding model has been utilized for projecting the desired mode of operation from the current reference plane to the external reference plane. The design scheme is experimentally verified by using a 15-W GaN HEMT device from CREE to design 15 W Class-F power amplifier with peak drain efficiency of 76.8% while operating in a 60 MHz bandwidth around 2 GHz.