Title :
An experimental study on the potential use of ReRAM as SSD buffer
Author :
Mengnan Wu;Yang Yang;Liangliang Dai;Xinxin Zhang;Hongbin Sun;Ruizhi Zhang;Jianxiao Wang;Nanning Zheng
Author_Institution :
School of Electronic and Information Engineering, Xi´an Jiaotong University, Xi´an, Shaanxi 710049, China
Abstract :
As ReRAM can provide great scalability, high density and fast access latency, it is promising to replace DRAM with ReRAM as SSD buffer. Nevertheless, compared with DRAM, ReRAM is much slower and has limited endurance. This paper makes the first experimental study to evaluate the potential performance and endurance challenges for ReRAM-based SSD buffer design. Evaluation results demonstrate that, compared with DRAM-based buffer, the use of ReRAM-based buffer can reduce the average access latency of SSD by up to 27%. In addition, the ReRAM endurance of 1010 can at least guarantee a more than 20 years raw lifetime for SSD buffer design.
Keywords :
"Random access memory","Flash memories","Buffer storage","Nonvolatile memory","Benchmark testing","Computer architecture","Scalability"
Conference_Titel :
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN :
978-1-4799-8483-1
Electronic_ISBN :
2162-755X
DOI :
10.1109/ASICON.2015.7517039