TCAD simulations of novel Interrupted-P-Finger UV/Blue photodiode based on CMOS process

In this paper, Ultraviolet (UV) and blue-extended photodiode with octagon-ring-shaped structure is proposed, which have increased responsivity for the UV and blue light, high responsive speed with UV/blue selectivity. To enhance the speed of the photodiode further, an Interrupted-P-Finger is employed instead of a continuous P+ region for maximizing the depletion regions available for carrier collection, particularly near the surface of the device. With new layer (SEN and CPI) structure into four different structures. TCAD simulation approach is used to optimization and analysis the structural characteristics and photoelectric characteristics of this Interrupted-P-Finger Photodiode. For the photoelectric characteristics, the influences caused by the new layer on opto-current response, dark current, avalanche breakdown voltage and wavelength response are discussed in detail.