DocumentCode
3781296
Title
PDK design of 0.13um SOI process
Author
Jiang Bingjian;Junli Sheng;Zhangwen Tang
Author_Institution
ASIC & System State Key Laboratory, Fudan University, Shanghai 201503, China
fYear
2015
Firstpage
1
Lastpage
4
Abstract
This paper presents a PDK design in 0.13um SOI process provided by GSMC Corporation as well as a LDO design in This PDK. PDK (Process Design Kit) for analog/mixed-signal IC design provides a complete set of design documents, which is a connection between the integrated circuit and integrated circuit technology manufacturing complete data platform.[1] This article uses the GTE tools provided by Cadence to complete the design of CDF, layout and technology file. Some corresponding optimization was utilized to fit the characteristics of the SOI technology. Finally, this paper introduces a LDO design using this PDK suite which demonstrated the feasibility of this PDK design.
Keywords
"Logic gates","MOSFET","Layout","Integrated circuits","Metals","Regulators","Photonic band gap"
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2015 IEEE 11th International Conference on
Print_ISBN
978-1-4799-8483-1
Electronic_ISBN
2162-755X
Type
conf
DOI
10.1109/ASICON.2015.7517077
Filename
7517077
Link To Document