• DocumentCode
    3781296
  • Title

    PDK design of 0.13um SOI process

  • Author

    Jiang Bingjian;Junli Sheng;Zhangwen Tang

  • Author_Institution
    ASIC & System State Key Laboratory, Fudan University, Shanghai 201503, China
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a PDK design in 0.13um SOI process provided by GSMC Corporation as well as a LDO design in This PDK. PDK (Process Design Kit) for analog/mixed-signal IC design provides a complete set of design documents, which is a connection between the integrated circuit and integrated circuit technology manufacturing complete data platform.[1] This article uses the GTE tools provided by Cadence to complete the design of CDF, layout and technology file. Some corresponding optimization was utilized to fit the characteristics of the SOI technology. Finally, this paper introduces a LDO design using this PDK suite which demonstrated the feasibility of this PDK design.
  • Keywords
    "Logic gates","MOSFET","Layout","Integrated circuits","Metals","Regulators","Photonic band gap"
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2015 IEEE 11th International Conference on
  • Print_ISBN
    978-1-4799-8483-1
  • Electronic_ISBN
    2162-755X
  • Type

    conf

  • DOI
    10.1109/ASICON.2015.7517077
  • Filename
    7517077