Post-bond test for TSVs using voltage division

Through Silicon Vias (TSVs) are the transmission lines between different bonding layers and are indispensable elements in three-dimensional integrated circuits (3D-ICs). But because of process problems, kinds of defects exist in TSVs, including open defects and short defects. A variety of test methods have been proposed for open defects, but few can deal with both open defects and short defects. In this work, a post-bond method is presented for both defects by using voltage division. TSVs with defects can be located by testing the output pulses. HSPICE simulations including process parameter variations show the effectiveness of the method.