Performance evaluation and influence of device parameters on threshold voltage of dual-material strained gate-all-around MOSFET

In this paper, the influences of various device parameters such as channel length, channel radius, gate oxide thickness, and strain on the threshold voltage of the dual-material strained gate-all-around MOSFET have been analyzed. The electrical performance of the device such as DIBL and electron mobility has been investigated. The short channel effects (SCEs) and hot carrier effect have been alleviated because of using dual-material structure. The threshold voltage decreases as the device downscales. A higher strain induced in the channel will decrease the threshold voltage. The DIBL effect won´t aggravate because of the introduction of strain, but the threshold voltage roll-off will become severe. It is important to make a tradeoff between the mobility improvement caused by strain technology and SCEs.