High power single lateral mode λ=1.48-1.62 μm laser diodes

Author

Pikhtin, Nikita A. ; Fetisova, Natalya V. ; Golikova, Ekaterina G. ; Lyutetskiy, Andrey V. ; Slipchenko, Sergey O. ; Tarasov, Ilya S.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

2

fYear

2001

fDate

2001

Firstpage

166

Abstract

InGaAsP/InP heterostructure and ridge laser diode construction were optimized for the achievement of high output power in a single lateral mode. Room temperature continuous wave output power as high as 500 mW from a narrow stripe laser diode (λ=1.48-1.62 μm) was reached, with a single lobe far-field pattern up to maximum drive currents.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; waveguide lasers; 1.48 to 1.62 micron; 500 mW; InGaAsP-InP; InGaAsP/InP heterostructure; graded-index waveguide; high power single lateral mode laser diodes; maximum drive currents; narrow stripe laser diode; quantum well; ridge laser diode construction; room temperature continuous wave output power; single lateral mode; single lobe far-field pattern; Coatings; Diode lasers; Electrons; Optical sensors; Optimized production technology; Power generation; Power measurement; Semiconductor device measurement; Temperature sensors; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.988866

Filename

988866