Up to 10 Gbit/s data transmission with 1.3 μm wavelength InGaAsN VCSELs

Author

Mederer, F. ; Steinle, G. ; Kristen, G. ; Michalzik, R. ; Riechert, H. ; Egorov, A.Y. ; Ebeling, K.J.

Author_Institution

Dept. Optoelectronics, Ulm Univ., Germany

Volume

2

fYear

2001

fDate

2001

Firstpage

218

Abstract

We demonstrate room-temperature data transmission with monolithic InGaAsN/GaAs VCSELs, emitting maximum single-mode optical power of 700 μW at 1304 nm wavelength. Bit error rates of less than 10^-12 have been achieved for transmission over 20.5 km standard single-mode fiber and 500 m multi-mode fiber at 2.5 Gbit/s and back-to-back transmission at 10 Gbit/s.

Keywords

III-VI semiconductors; data communication equipment; gallium arsenide; indium compounds; monolithic integrated circuits; optical communication equipment; quantum well lasers; surface emitting lasers; 1.3 micron; 10 Gbit/s; 1304 nm; 2.5 Gbit/s; 20.5 km; 500 m; 700 muW; BER; III V semiconductors; back-to-back transmission; bit error rate; monolithic VCSEL; multi-mode optical fiber; quantum wells; room-temperature data transmission; single-mode optical fiber; single-mode optical power; vertical-cavity surface-emitting lasers; Data communication; Gallium arsenide; High speed optical techniques; Nitrogen; Optical fiber communication; Optical fiber testing; Optical modulation; Optical transmitters; Stimulated emission; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.988890

Filename

988890