SiGe BiCMOS 3.3 V clock and data recovery circuits for 10 Gb/s serial transmission systems

A 9.95 Gb/s and a 12.5 Gb/s fully-monolithic 3.3 V clock and data recovery (CDR) circuit, are targeted at SONET OC-192 and 10GBE applications, respectively. The ICs are implemented in a production level SiGe BiCMOS with 45 GHz cut-off frequency. Compared to other technologies for high-speed ICs, such as GaAs HBT technology, SiGe BiCMOS technology has advantages. It provides a much higher integration density and enables the combination of very complex digital functions with multi-gigabit digital/analog functions on the same chip, providing cost-effective and smart solutions for complex communication systems. Several CDR circuits at 10 Gb/s using SiGe and Si technology are recently reported.