Title :
An analytical 3-D model for small dimensions MOSFETs´ threshold voltage
Author :
D.Z. Pilja;R.M. Sasic;R.M. Ramovic;D.A. Tjapkin
Author_Institution :
Fac. of Electr. Eng., Belgrade Univ., Serbia
Abstract :
This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed.
Keywords :
"Analytical models","MOSFETs","Poisson equations","Performance analysis","Integrated circuit modeling","Boundary conditions","Algorithm design and analysis","Circuit simulation","Voltage control","Ion implantation"
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840559
