• DocumentCode
    3782845
  • Title

    An analytical 3-D model for small dimensions MOSFETs´ threshold voltage

  • Author

    D.Z. Pilja;R.M. Sasic;R.M. Ramovic;D.A. Tjapkin

  • Author_Institution
    Fac. of Electr. Eng., Belgrade Univ., Serbia
  • Volume
    1
  • fYear
    2000
  • Firstpage
    217
  • Abstract
    This paper has presented an analytical three-dimensional (3D) model for threshold voltage of small dimensions MOSFETs with an experimental dependence of acceptor concentration in the channel. The corresponding algorithms have been developed and the simulation of surface potential and threshold voltage has been performed.
  • Keywords
    "Analytical models","MOSFETs","Poisson equations","Performance analysis","Integrated circuit modeling","Boundary conditions","Algorithm design and analysis","Circuit simulation","Voltage control","Ion implantation"
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
  • Print_ISBN
    0-7803-5235-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.2000.840559
  • Filename
    840559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3782845