Title :
Degradation of /spl alpha/-Si:H TFTs caused by electrostatic discharge
Author :
N. Tosic;F.G. Kuper;T. Mouthaan
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Abstract :
This paper gives results of experimental analysis of impact of electrostatic discharge (ESD) pulse on amorphous silicon thin film transistors (/spl alpha/-Si:H TFT). The development of degradation of the electron mobility and the threshold voltage is presented. Failure analysis has been done and two failure mechanisms have been identified.
Keywords :
"Degradation","Electrostatic discharge","Thin film transistors","Voltage","Pulse measurements","Electron mobility","MOSFETs","Displays","Circuit testing","Distributed parameter circuits"
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840589
