Title :
Power VDMOS transistors response to lowered temperature conditions
Author :
S. Djoric-Veljkovic;S. Golubovic;V. Davidovic;N. Stojadinovic
Author_Institution :
Fac. of Technol., Nis Univ., Serbia
Abstract :
In this paper the results of investigation of lowered temperature effects on commercial n-channel power VDMOS transistors are presented. It is found that electrical parameters, threshold voltage and gain factor, of the transistors subjected to lowered temperature are generally improved.
Keywords :
"Temperature","Threshold voltage","Cooling","MOSFETs","Microelectronics","Electronic equipment testing","Performance evaluation","Solid state circuits","Physics","Nitrogen"
Conference_Titel :
Microelectronics, 2000. Proceedings. 2000 22nd International Conference on
Print_ISBN :
0-7803-5235-1
DOI :
10.1109/ICMEL.2000.840595
