Title :
The monolithic bidirectional switch (MBS)
Author :
F. Heinke;R. Sittig
Author_Institution :
Inst. fur Elektrophys., Tech. Univ. Braunschweig, Germany
Abstract :
A new power semiconductor device is introduced which facilitates bidirectional operation. Numerical simulations predict excellent stationary characteristics up to high temperatures. Moreover under all operation conditions the device allows one to adjust the distribution of the electron hole plasma. For instance during turn-off it is possible to control the rate of current decay and the corresponding overvoltage peak.
Keywords :
"Charge carrier processes","Voltage control","Silicon","Breakdown voltage","Plasma temperature","Electrodes","Power semiconductor switches","Power semiconductor devices","Plasma properties","Plasma devices"
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856815
