Manufacturable 2.5 Gbit/s edge-coupled waveguide photodiode for optical hybrid-integrated modules

Author

Achouche, M. ; Derouin, E. ; Carpentier, D. ; Boucherez, E. ; Pagnod, P. ; Jany, C. ; Poingt, F. ; Grosmaire, S. ; Coupe, V. ; Blache, F. ; Bonnet-Gamard, J. ; Giraudet, L. ; Devaux, F.

Author_Institution

GIE Groupement d´´lnteret Economique, Opto+, Marcoussis, France

Volume

4

fYear

2001

fDate

2001

Firstpage

552

Abstract

Side-illuminated photodiodes designed for surface hybrid integration on a silicon optical bench are described. InGaAs PIN photodiode chips fabricated on a 2inch-wafer with an integrated dry etched waveguide input facet with an antireflection coating deposition on the wafer, exhibit very low dark currents of typically 20 pA at -10 V bias voltage and 25°C. Fiber coupled responsivity as high as 0.95 A/W at 1.3 μm wavelength, and vertical coupling tolerance at -1 dB as wide as ±2 μm are demonstrated. Reliability testing under high temperature and bias-stress conditions shows very stable operation.

Keywords

gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical communication equipment; optical fibre communication; optical waveguides; p-i-n photodiodes; silicon; substrates; 1.3 micron; InGaAs; PIN photodiode; Si; antireflection coating; edge-coupled waveguide photodiode; flip-chip technology; optical hybrid-integrated modules; reliability testing; silicon optical bench; Coatings; Dry etching; Indium gallium arsenide; Integrated optics; Manufacturing; Optical design; Optical surface waves; Optical waveguides; PIN photodiodes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.989105

Filename

989105