DocumentCode
378304
Title
An ultra high speed waveguide avalanche photodiode for 40-Gb/s optical receiver
Author
Nakata, T. ; Takeuchi, T. ; Makita, K. ; Amamiya, Y. ; Suzuki, Y. ; Torikai, T.
Author_Institution
Photonic & Wireless Res. Labs., NEC Corp., Ibaraki, Japan
Volume
4
fYear
2001
fDate
2001
Firstpage
564
Abstract
We have developed an ultra high speed InAlAs-WG-APD with a 30-GHz bandwidth. We fabricated well defined small mesa APDs using dry-etching to reduce the capacitance of the APD. By combining this WG-APD and a GaAs-based preamplifier, we achieved a 30-GHz bandwidth APD receiver at M=2. This front end shows the possibility of applying the APDs to 40-Gb/s optical receivers for the first time.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; optical receivers; 30 GHz; 40 Gbit/s; APD receiver; GaAs-based preamplifier; InAlAs; capacitance reduction; dry-etching; optical communication systems; optical receiver; ultra high speed waveguide avalanche photodiode; well defined small mesa avalanche photodiode; Avalanche photodiodes; Bandwidth; Capacitance; Indium compounds; Optical materials; Optical receivers; Optical waveguides; Reproducibility of results; Substrates; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN
0-7803-6705-7
Type
conf
DOI
10.1109/ECOC.2001.989111
Filename
989111
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