• DocumentCode
    3783253
  • Title

    Ridge-waveguide InAs/GaAs lasers

  • Author

    L. Kuna;F. Uherek;J. Kovac;J. Jakabovic;V. Gottschalch;B. Rheinlander

  • Author_Institution
    Microelectron. Dept., Slovak Univ. of Technol. & Int. Laser Centre, Bratislava, Slovakia
  • fYear
    2000
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.
  • Keywords
    "Gallium arsenide","Geometrical optics","Pulse measurements","Optical device fabrication","Current measurement","Optical materials","Epitaxial growth","Epitaxial layers","Substrates","Zinc"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889464
  • Filename
    889464