DocumentCode :
3783253
Title :
Ridge-waveguide InAs/GaAs lasers
Author :
L. Kuna;F. Uherek;J. Kovac;J. Jakabovic;V. Gottschalch;B. Rheinlander
Author_Institution :
Microelectron. Dept., Slovak Univ. of Technol. & Int. Laser Centre, Bratislava, Slovakia
fYear :
2000
Firstpage :
127
Lastpage :
130
Abstract :
We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.
Keywords :
"Gallium arsenide","Geometrical optics","Pulse measurements","Optical device fabrication","Current measurement","Optical materials","Epitaxial growth","Epitaxial layers","Substrates","Zinc"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
Print_ISBN :
0-7803-5939-9
Type :
conf
DOI :
10.1109/ASDAM.2000.889464
Filename :
889464
Link To Document :
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