• DocumentCode
    3783258
  • Title

    Beryllium doped low-temperature-grown MBE GaAs: material for photomixing in the THz frequency range

  • Author

    J. Darmo;F. Schaffer;A. Forster;P. Kordos

  • Author_Institution
    Max-Planck-Inst. fur Radioastron., Bonn, Germany
  • fYear
    2000
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    Several topics related to the performance of a photoconductive mixer based on low-temperature-grown MBE GaAs are addressed. Approaches to a reduction of charge carrier lifetime and an improvement of the heat dissipation from structure are discussed. Relevant experimental data obtained for Be-doped GaAs are presented.
  • Keywords
    "Gallium arsenide","Frequency","Photodetectors","Molecular beam epitaxial growth","Substrates","Doping","Charge carrier lifetime","Temperature distribution","Charge carriers","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on
  • Print_ISBN
    0-7803-5939-9
  • Type

    conf

  • DOI
    10.1109/ASDAM.2000.889470
  • Filename
    889470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3783258