DocumentCode
378379
Title
1.3 μm quantum dot DFB lasers
Author
Klopf, F. ; Krebs, R. ; Wolf, A. ; Emmerling, M. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Technische Phys., Wurzburg Univ., Germany
Volume
1
fYear
2001
fDate
2001
Firstpage
28
Abstract
Using laterally patterned metal gratings, single mode operation of 1.3 μm InAs/GaInAs quantum dot lasers has been achieved. At room temperature the lasers exhibit threshold currents as low as 17 mA, output powers of up to 8 mW (cw) and very stable single mode emission with side mode suppression ratios of well above 40 dB.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; semiconductor quantum dots; 1.3 micron; 17 mA; 8 mW; InAs-GaInAs; InAs/GaInAs quantum dot lasers; laterally patterned metal gratings; output powers; quantum dot DFB lasers; room temperature; side mode suppression ratios; single mode operation; threshold currents; very stable single mode emission; Distributed feedback devices; Fiber lasers; Gallium arsenide; Gratings; Laser modes; Laser stability; Quantum dot lasers; Semiconductor lasers; Threshold current; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN
0-7803-6705-7
Type
conf
DOI
10.1109/ECOC.2001.989416
Filename
989416
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